A full adder using resonant-tunneling hot electron transistors (RHETs)

Author

Imamura, Kenichi ; Takatsu, Motomu ; Mori, Toshihiko ; Adachihara, Takami ; Ohnishi, Hiroaki ; Muto, Shunichi ; Yokoyama, Naoki

Author_Institution

Fujitsu Ltd., Atsugi, Japan

Volume

39

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2707

Lastpage

2710

Abstract

Full adders are demonstrated using InGaAs-In(AlGa)As RHETs. The RHET´s emitter and base electrodes were self-aligned using a SiO₂ sidewall and angled beam ion milling. The common-base current gain was about 0.9 and the emitter current peak-to-valley ratio was 10. The RHET full adder was constructed using a three-input exclusive-OR logic gate and a three-input majority logic gate. The authors confirmed normal operation of the full adder at 77 K. Only seven RHETs were needed for the full adder, about one-quarter of bipolar transistors that would have been required

Keywords

III-V semiconductors; adders; aluminium compounds; bipolar integrated circuits; hot electron transistors; indium compounds; integrated logic circuits; resonant tunnelling devices; 77 K; HET; InGaAs-In(AlGa)As; RHET; SiO₂ sidewall; angled beam ion milling; full adder; hot electron transistors; resonant-tunneling; self-aligned; three-input exclusive-OR logic gate; three-input majority logic gate; Adders; Capacitance; Delay; Electrons; Indium gallium arsenide; Integrated circuit interconnections; Logic gates; Molecular beam epitaxial growth; Resonant tunneling devices; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.168752

Filename

168752