Title :
Breakdown-speed considerations in AlGaAs/GaAs heterojunction bipolar transistors with special collector designs
Author :
Chau, Hin-Fai ; Hu, Juntao ; Pavlidis, Dimitris ; Tomizawa, Kazutaka
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci, Michigan Univ., Ann Arbor, MI, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
The breakdown-speed tradeoffs of AlGaAs/GaAs HBTs with special collector designs are presented. Monte Carlo techniques and 1-D drift-diffusion modeling are used for speed and breakdown simulation, respectively. Base current reversal is indicative of breakdown and is used in conjunction with the (breakdown voltage/total transit time) figure of merit in order to set up HBT performance criteria. Conventional (n-) and inverted field (p-) collectors show a good speed-breakdown compromise over a limited collector current density. Equally good characteristics but over a broader current range can be obtained from collector launcher (δn +-n--δp+) HBTs. Undoped collector HBTs (i-δp+) operate best at low currents. Overall, the use of special collector structures does not always guarantee the best speed-breakdown performance
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; electric breakdown of solids; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; δn+-n--δp+; 1D model; AlGaAs-GaAs; HBT performance criteria; Monte Carlo techniques; base current reversal; breakdown simulation; breakdown voltage; breakdown-speed tradeoffs; collector current density; collector designs; collector launcher; drift-diffusion modeling; figure of merit; heterojunction bipolar transistors; inverted field type; n--type; total transit time; undoped collector; Breakdown voltage; Current density; Doping; Electric breakdown; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Monte Carlo methods; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
