Wave techniques for noise modeling and measurement

Author

Wedge, Scott W. ; Rutledge, David B.

Author_Institution

Div. of Eng. & Appl. Sci., California Inst. of Technol., Pasadena, CA, USA

Volume

40

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2004

Lastpage

2012

Abstract

The noise wave approach is applied to analysis, modeling, and measurement applications. Methods are presented for the calculation of component and network noise wave correlation matrices. Embedding calculations, relations to two-port figures-of-merit, and transformations to traditional representations are discussed. Simple expressions are derived for MESFET and HEMT noise wave parameters based on a linear equivalent circuit. A noise wave measurement technique is presented and experimentally compared with the conventional method

Keywords

S-matrix theory; S-parameters; Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; linear network analysis; microwave measurement; multiport networks; noise; semiconductor device models; semiconductor device noise; semiconductor device testing; solid-state microwave circuits; HEMT; MESFET; correlation matrices; embedding calculations; linear equivalent circuit; noise modeling; noise wave measurement technique; two-port analysis; Circuit noise; Equivalent circuits; Frequency; Graph theory; HEMTs; MESFET circuits; Measurement techniques; Noise measurement; Scattering parameters; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.168757

Filename

168757