Title :
Improvement of responsivity of a room temperature 10.6 μm sensor using an intra-band transition
Author_Institution :
Dept. of Electr. Eng., Nat. Defense Acad., Yokosuka, Japan
fDate :
12/1/1991 12:00:00 AM
Abstract :
An improvement in the responsivity of room temperature 10.6-μm sensors based on an intra-band transition is proposed. The sensor, fabricated in p-type germanium, forms a resonator. An improvement of 20 dB in the responsivity is obtained at zero bias voltage. This is comparable to values for sensors based on uncooled HgCdTe
Keywords :
elemental semiconductors; germanium; infrared detectors; 10.6 micron; Ge; IR detector; intra-band transition; p-Ge; resonator; responsivity; room temperature; uncooled HgCdTe; zero bias voltage; Absorption; Germanium; Heating; Laser beams; Optical reflection; Optical resonators; Optical sensors; Temperature sensors; Vertical cavity surface emitting lasers; Voltage;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
