DocumentCode :
1192311
Title :
Normal incidence infra-red absorption from intersub-band transitions in p-type GaInAs/AlInAs quantum wells
Author :
Katz, Justin ; Zhang, Ye ; Wang, W.I.
Author_Institution :
Columbia Univ., New York, NY, USA
Volume :
28
Issue :
10
fYear :
1992
fDate :
5/7/1992 12:00:00 AM
Firstpage :
932
Lastpage :
934
Abstract :
Infra-red intersub-band absorption measurements were performed on p-type Ga0.47In0.53As/Al0.48In0.52As multiquantum wells using normally incident radiation. Several strong intersub-band absorption peaks were observed in the wavelength range 6-12 mu m. The transition from the impurity bound state to the extended state was observed for the first time.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; semiconductor quantum wells; 6 to 12 micron; Ga 0.47In 0.53As-Al 0.48In 0.52As; IR absorption; extended state; impurity bound state; intersub-band absorption peaks; intersub-band transitions; multiquantum wells; normally incident radiation; p-type quantum wells; semiconductors; transition; wavelength range;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920590
Filename :
137197
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1192311
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