Title :
Quantum well laser with single InAs monolayer in active region
Author :
Dotor, M.L. ; Huertas, P. ; Melendez, Jaime ; Mazuelas, A. ; Garriga, Martin ; Golmayo, D. ; Briones, F.
Author_Institution :
Centro Nacional de Microelectron., Madrid, Spain
fDate :
5/7/1992 12:00:00 AM
Abstract :
A single monolayer thick InAs quantum well laser structure has been grown at low substrate temperature by atomic layer molecular beam epitaxy (ALMBE). The laser has an emission wavelength of approximately 884 nm and a threshold current density of 1.97 kA/cm2 at room temperature. This value is lower than values obtained for other monolayer thick quantum well lasers, and it demonstrates the device quality of epitaxial layers grown at 350 degrees C by ALMBE.
Keywords :
III-V semiconductors; atomic layer epitaxial growth; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; 350 C; 884 nm; ALMBE; InAs quantum well laser; atomic layer molecular beam epitaxy; emission wavelength; monolayer thick quantum well lasers; room temperature; semiconductors; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920592
