• DocumentCode
    1192350
  • Title

    In0.1Ga0.9As/GaAs/AlAs pseudomorphic resonant tunnelling diodes integrated with airbridge

  • Author

    Lheurette, E. ; Grimbert, Bertrand ; Francois, M. ; Tilmant, P. ; Lippens, Didier ; Nagle, J. ; Vinter, Brian

  • Author_Institution
    Univ. des Sci. et Technol. de Villeneuve d´Ascq, France
  • Volume
    28
  • Issue
    10
  • fYear
    1992
  • fDate
    5/7/1992 12:00:00 AM
  • Firstpage
    937
  • Lastpage
    938
  • Abstract
    The fabrication of an airbridged low parasitic resonant tunnelling diode is described. The devices were fabricated from strained In0.1Ga0.9As/GaAs/AlAs layers. They yielded excellent DC characteristics with simultaneously high peak-to-valley current ratios of 7:1 and peak current of 50 kA/cm2 at 300 K. RF measurements up to 40 GHz showed that the total parasitic capacitance was 0.013 pF.
  • Keywords
    III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; indium compounds; resonant tunnelling devices; solid-state microwave devices; tunnel diodes; 0.013 pF; 300 K; 40 GHz; DC characteristics; In 0.1Ga 0.9As-GaAs-AlAs; RF measurements; airbridge; fabrication; low parasitic capacitance; parasitic capacitance; peak current; peak-to-valley current ratios; pseudomorphic diodes; resonant tunnelling diodes; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920593
  • Filename
    137200
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1192350