DocumentCode :
1192350
Title :
In0.1Ga0.9As/GaAs/AlAs pseudomorphic resonant tunnelling diodes integrated with airbridge
Author :
Lheurette, E. ; Grimbert, Bertrand ; Francois, M. ; Tilmant, P. ; Lippens, Didier ; Nagle, J. ; Vinter, Brian
Author_Institution :
Univ. des Sci. et Technol. de Villeneuve d´Ascq, France
Volume :
28
Issue :
10
fYear :
1992
fDate :
5/7/1992 12:00:00 AM
Firstpage :
937
Lastpage :
938
Abstract :
The fabrication of an airbridged low parasitic resonant tunnelling diode is described. The devices were fabricated from strained In0.1Ga0.9As/GaAs/AlAs layers. They yielded excellent DC characteristics with simultaneously high peak-to-valley current ratios of 7:1 and peak current of 50 kA/cm2 at 300 K. RF measurements up to 40 GHz showed that the total parasitic capacitance was 0.013 pF.
Keywords :
III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; indium compounds; resonant tunnelling devices; solid-state microwave devices; tunnel diodes; 0.013 pF; 300 K; 40 GHz; DC characteristics; In 0.1Ga 0.9As-GaAs-AlAs; RF measurements; airbridge; fabrication; low parasitic capacitance; parasitic capacitance; peak current; peak-to-valley current ratios; pseudomorphic diodes; resonant tunnelling diodes; semiconductors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920593
Filename :
137200
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1192350
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