Title :
Heterodyne reception of millimeterwave-modulated optical signals with an InP-based transistor
Author :
Rauscher, Christen ; Williams, Keith J.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
11/1/1994 12:00:00 AM
Abstract :
High-frequency transistors are known for their ability to efficiently perform signal processing functions that reach beyond mere amplification. Among such functions are oscillation, signal mixing, frequency multiplication, and optical signal detection. The current investigation focuses specifically on these four functions as they pertain to retrieving signal information impressed on optical carriers of 1.3-μm wavelength. The main demonstration object is a 40-GHz hybrid-integrated heterodyne receiver circuit that employs an InP-based HEMT in a four-function role to simultaneously provide carrier demodulation, self-generation of a local oscillation signal, internal frequency doubling thereof, and signal downconversion to a lower intermediate frequency band
Keywords :
HEMT circuits; demodulation; frequency multipliers; high electron mobility transistors; integrated optoelectronics; millimetre wave frequency convertors; millimetre wave mixers; optical modulation; optical receivers; optical signal detection; reception; 1.3 micron; 40 GHz; EHF; HEMT; InP; InP-based transistor; MM-wave modulation; carrier demodulation; frequency multiplication; heterodyne reception; hybrid-integrated heterodyne receiver circuit; internal frequency doubling; local oscillation signal self-generation; millimeterwave-modulated optical signals; optical signal detection; oscillation; signal downconversion; signal mixing; Circuits; Frequency conversion; HEMTs; Information retrieval; Optical harmonic generation; Optical mixing; Optical receivers; Optical signal detection; Optical signal processing; Stimulated emission;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on