Title :
2V drive-voltage switching operation in 1.55 mu m GaInAs/InP MQW intersectional waveguide optical switch
Author :
Shimomura, Kazuya ; Tanaka, Nobuyuki ; Aizawa, Takehiro ; Arai, Shigehisa
Author_Institution :
Tokyo Inst. of Technol., Japan
fDate :
5/7/1992 12:00:00 AM
Abstract :
A low switching voltage of less than 2 V was achieved in a GaInAs/InP MQW intersectional waveguide optical switch operating at 1.55 mu m. This switch was fabricated by only one-step epitaxial growth followed by a pattern etching process using electron beam lithography for electrical isolation and photolithography for waveguide formation.
Keywords :
III-V semiconductors; electron beam lithography; gallium arsenide; indium compounds; integrated optics; optical switches; photolithography; semiconductor quantum wells; 1.55 micron; GaInAs-InP; III-V semiconductors; MQW; electrical isolation; electron beam lithography; intersectional waveguide optical switch; one-step epitaxial growth; pattern etching process; photolithography; switching voltage; waveguide formation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920606
