• DocumentCode
    1192458
  • Title

    2V drive-voltage switching operation in 1.55 mu m GaInAs/InP MQW intersectional waveguide optical switch

  • Author

    Shimomura, Kazuya ; Tanaka, Nobuyuki ; Aizawa, Takehiro ; Arai, Shigehisa

  • Author_Institution
    Tokyo Inst. of Technol., Japan
  • Volume
    28
  • Issue
    10
  • fYear
    1992
  • fDate
    5/7/1992 12:00:00 AM
  • Firstpage
    955
  • Lastpage
    957
  • Abstract
    A low switching voltage of less than 2 V was achieved in a GaInAs/InP MQW intersectional waveguide optical switch operating at 1.55 mu m. This switch was fabricated by only one-step epitaxial growth followed by a pattern etching process using electron beam lithography for electrical isolation and photolithography for waveguide formation.
  • Keywords
    III-V semiconductors; electron beam lithography; gallium arsenide; indium compounds; integrated optics; optical switches; photolithography; semiconductor quantum wells; 1.55 micron; GaInAs-InP; III-V semiconductors; MQW; electrical isolation; electron beam lithography; intersectional waveguide optical switch; one-step epitaxial growth; pattern etching process; photolithography; switching voltage; waveguide formation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920606
  • Filename
    137212
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1192458