Title :
Design and Characterization of CMOS/SOI Image Sensors
Author :
Brouk, Igor ; Alameh, Kamal ; Nemirovsky, Yael
Author_Institution :
Dept. of Electr. Eng, Israel Inst. of Technol., Haifa
fDate :
3/1/2007 12:00:00 AM
Abstract :
The design, operation, and characterization of CMOS imagers implemented using: 1) "regular" CMOS wafers with a 0.5-mum CMOS analog process; 2) "regular" CMOS wafers with a 0.35-mum CMOS analog process; and 3) silicon-on-insulator (SOI) wafers in conjunction with a 0.35-mum CMOS analog process, are discussed in this paper. The performances of the studied imagers are compared in terms of quantum efficiency, dark current, and optical bandwidth. It is found that there is strong dependence of quantum efficiency of the photodiodes on the architecture of the image sensor. The results of this paper are useful for designing and modeling CMOS/SOI image sensors
Keywords :
CMOS image sensors; integrated circuit design; silicon-on-insulator; 0.35 micron; 0.5 micron; CMOS analog process; CMOS image sensors; CMOS wafers; SOI; dark current; optical bandwidth; photodiodes; quantum efficiency; silicon-on-insulator wafers; CMOS image sensors; CMOS process; CMOS technology; Cameras; Image sensors; Integrated circuit technology; Isolation technology; Photodiodes; Silicon on insulator technology; Substrates; CMOS integrated circuits; image sensors; photodiodes; silicon-on-insulator (SOI) technology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.890585
