DocumentCode :
11925
Title :
Composite Behavior of Multiple Memristor Circuits
Author :
Budhathoki, Ram Kaji ; Sah, Maheshwar Pd. ; Adhikari, Shyam Prasad ; Hyongsuk Kim ; Chua, Leon
Author_Institution :
Div. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea
Volume :
60
Issue :
10
fYear :
2013
fDate :
Oct. 2013
Firstpage :
2688
Lastpage :
2700
Abstract :
Composite characteristics of the parallel and serial connections of memristors are investigated. The memristor is one of the fundamental electrical elements, which has recently been successfully built. However, its electrical characteristics are not yet fully understood. When multiple memristors are connected to each other, the composite behavior of the devices becomes complicated and is difficult to predict, due to the polarity dependent nonlinear variation in the memristance of individual memristors. In this work, we investigate the relationships among flux, charge, and memristance of diverse composite memristors, using both linear and nonlinear memristor models, and analyze the characteristics of complex memristor circuits.
Keywords :
memristors; composite behavior; multiple memristor circuits; parallel connections; serial connections; Charge; composite behavior; flux; memristance; memristor;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2013.2244320
Filename :
6495497
Link To Document :
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