Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs

Author

El Hamid, Hamdy Abd ; Iñíguez, Benjamin ; Guitart, Jaume Roig

Author_Institution

Departament d´´ Enginyeria Electronica, Electrica i Automatica, Univ. Rovira i Virgili, Tarragona

Volume

54

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

572

Lastpage

579

Abstract

Analytical physically based models for the threshold voltage, subthreshold swing, and drain-induced barrier lowering (DIBL) of undoped cylindrical gate-all-around MOSFETs have been derived based on an analytical solution of 2-D Poisson´s equation (in cylindrical coordinates) in which the mobile charge term has been included. Using the new model, threshold voltage, DIBL and subthreshold swing sensitivities to channel length, and channel thickness have been investigated. The models for DIBL, subthreshold swing, and threshold voltage rolloff parameters have been verified by comparison with 3-D numerical simulations; close agreement with the numerical simulations has been observed

Keywords

MOSFET; Poisson equation; numerical analysis; semiconductor device models; 2D Poisson equation; 3D numerical simulation; MOSFET; drain-induced barrier lowering; semiconductor device modeling; subthreshold swing; threshold voltage; Analytical models; Degradation; Electrostatics; Helium; Integrated circuit modeling; Lead compounds; MOSFETs; Numerical simulation; Poisson equations; Threshold voltage; Device modeling; MOSFET; downscaling; drain-induced barrier lowering (DIBL); gate-all-around (GAA); subthreshold swing; threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.890595

Filename

4114840