Title :
Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs
Author :
El Hamid, Hamdy Abd ; Iñíguez, Benjamin ; Guitart, Jaume Roig
Author_Institution :
Departament d´´ Enginyeria Electronica, Electrica i Automatica, Univ. Rovira i Virgili, Tarragona
fDate :
3/1/2007 12:00:00 AM
Abstract :
Analytical physically based models for the threshold voltage, subthreshold swing, and drain-induced barrier lowering (DIBL) of undoped cylindrical gate-all-around MOSFETs have been derived based on an analytical solution of 2-D Poisson´s equation (in cylindrical coordinates) in which the mobile charge term has been included. Using the new model, threshold voltage, DIBL and subthreshold swing sensitivities to channel length, and channel thickness have been investigated. The models for DIBL, subthreshold swing, and threshold voltage rolloff parameters have been verified by comparison with 3-D numerical simulations; close agreement with the numerical simulations has been observed
Keywords :
MOSFET; Poisson equation; numerical analysis; semiconductor device models; 2D Poisson equation; 3D numerical simulation; MOSFET; drain-induced barrier lowering; semiconductor device modeling; subthreshold swing; threshold voltage; Analytical models; Degradation; Electrostatics; Helium; Integrated circuit modeling; Lead compounds; MOSFETs; Numerical simulation; Poisson equations; Threshold voltage; Device modeling; MOSFET; downscaling; drain-induced barrier lowering (DIBL); gate-all-around (GAA); subthreshold swing; threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.890595
