Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling

Author

Hazeghi, Arash ; Krishnamohan, Tejas ; Wong, H. S Philip

Author_Institution

Center for Integrated Syst. & Dept. of Eng., Stanford Univ., CA

Volume

54

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

439

Lastpage

445

Abstract

The theoretical performance of carbon nanotube field-effect transistors (CNFETs) with Schottky barriers (SBs) is examined by means of a general ballistic model. A novel approach is used to treat the SBs at the metal-nanotube contacts as mesoscopic scatterers by modifying the distribution functions for carriers in the channel. Noticeable current reduction is observed compared to previous ballistic models without SBs. Evanescent-mode analysis is used to derive a scale length and the potential profile near the contacts for radially symmetric CNFET structures. Band-to-band tunneling current and ambipolar conduction are also treated. The effects of different device geometries and different nanotube chiralities on the drain-current are studied using this simple model. Quantum conductance degradation due to SBs is also observed

Keywords

Schottky barriers; ballistic transport; carbon nanotubes; chirality; field effect transistors; mesoscopic systems; semiconductor device models; tunnelling; CNFET; Schottky barriers; ambipolar conduction; ballistic transport; band-to-band tunneling current; carbon nanotube; evanescent-mode analysis; field-effect transistor; general ballistic model; mesoscopic scatterers; metal-nanotube contacts; nanotube chiralities; quantum conductance degradation; radially symmetric structures; Brillouin scattering; CNTFETs; Degradation; Distribution functions; Geometry; Nanoscale devices; Particle scattering; Schottky barriers; Solid modeling; Tunneling; Ballistic transport; CNFET; Schottky-barrier; carbon nanotube; compact model; evanescent-mode analysis; field-effect transistor; mesoscopic scatterer; modeling; nanoelectronics; simulation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.890384

Filename

4114843