Title :
Lateral Scale Down of InGaAs/InAs Composite-Channel HEMTs With Tungsten-Based Tiered Ohmic Structure for 2-S/mm gm and 500-GHz fT
Author :
Matsuzaki, Hideaki ; Maruyama, Takashi ; Koasugi, Toshihiko ; Takahashi, Hiroyuki ; Tokumitsu, Masami ; Enoki, Takatomo
Author_Institution :
NTT Photonics Labs., Kanagawa
fDate :
3/1/2007 12:00:00 AM
Abstract :
A laterally scaled-down ohmic structure and an InGaAs/InAs composite channel improve the dc and RF characteristics of InP-based HEMTs. We reduced the distance between the gate and ohmic metal to less than 100 nm and to form sub-100-nm-long gate simultaneously, and also introduced device passivation for future construction of subterahertz-band integrated circuits. A 50-nm-gate HEMT exhibiting extrinsic transconductance of 2.0 S/mm and extrinsic current gain cutoff frequency (fT) of 496 GHz was successfully fabricated with this technology. This is the first report of a transistor with both 500-GHz-class fT and large current drivability
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; ohmic contacts; passivation; submillimetre wave integrated circuits; submillimetre wave transistors; tungsten; 50 nm; 500 GHz; InGaAs-InAs; InGaAs/InAs composite-channel HEMT; InP; InP-based HEMT; W; device passivation; extrinsic transconductance; laterally scaled-down ohmic structure; ohmic metal; subterahertz-band integrated circuits; tungsten-based tiered ohmic structure; Cutoff frequency; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Noise figure; Noise measurement; Radio frequency; Temperature measurement; Transconductance; $f_{T}$; $g_{m}$; Composite channel; HEMT; InAs; InGaAs; InP; noise figure (NF);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.890262
