Electrical Stress Degradation of Small-Grain Polysilicon Thin-Film Transistors

Author

Palumbo, Domenico ; Masala, Silvia ; Tassini, Paolo ; Rubino, Alfredo ; Sala, Dario Della

Author_Institution

Res. Center, Italian Nat. Agency for New Technol., Energy & the Environ. (ENEA), Portici

Volume

54

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

476

Lastpage

482

Abstract

This paper is focused on the stability of n-channel laser-crystallized polysilicon thin-film transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small grains dimension. With the aid of numerical simulations, we investigate the effects of static stress using two types of procedures: the on stress and the hot carrier stress. Results show that the variations of trap state density into the whole polysilicon layer and not only near the drain junction are responsible for the degradation of TFTs performances in both the two types of stress and that the interface trap states play a negligible role compared to the bulk trap states

Keywords

hot carriers; semiconductor device reliability; thin film transistors; bulk trap states; density-of-states; electrical stress degradation; hot carrier stress; hydrogenation process; interface trap state density; n-channel laser-crystallized polysilicon thin-film transistors; numerical simulations; polysilicon layer; small-grain polysilicon thin-film transistors; static stress; Degradation; Hafnium; Laser stability; Numerical simulation; Organic light emitting diodes; Plasma applications; Resists; Silicon; Stress; Thin film transistors; Density-of-states (DoS); fixed charge; numerical simulation; reliability; thin-film transistor (TFTs);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.890377

Filename

4114856