Title :
Highly Reliable 1.5-μm DFB Laser With High-Mesa SIBH Structure
Author :
Takeshita, Tatsuya ; Tadokoro, Takashi ; Iga, Ryuzo ; Tohmori, Yuichi ; Yamamoto, Mitsuo ; Sugo, Mitsuru
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi
fDate :
3/1/2007 12:00:00 AM
Abstract :
The degradation behavior of 1.5-mum uncooled distributed feedback (DFB) lasers with a semi-insulating buried heterostructure during constant-power aging is investigated. Long-term stability is achieved by suppressing the t0.5 deterioration in the current increase rate (second-stage degradation). The improvement in reliability is attributed to the fact that some defects on the grating interface are simultaneously suppressed by the mutual diffusion that occurs when growing the SI-InP layer. We realized a DFB laser with high reliability (< 1000 failure digits) at 95 degC that is capable of error-free 2.5-Gb/s 80-km transmission at -20degC to 100 degC
Keywords :
III-V semiconductors; ageing; distributed feedback lasers; indium compounds; laser reliability; reliability; semiconductor lasers; wide band gap semiconductors; -20 to 100 C; 1.5 micron; 2.5 Gbit/s; 80 km; DFB Laser; InP; Mesa SIBH structure; grating interface defect; laser reliability; power aging; quantum-well laser; semiinsulating buried heterostructure; uncooled distributed feedback laser; Aging; Degradation; Distributed feedback devices; Fiber lasers; Gratings; Laser feedback; Laser modes; Optical transmitters; Semiconductor lasers; Temperature distribution; Aging; failure analysis; indium compounds; laser reliability; photon beams; quantum-well lasers; semiconductor lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.890367
