Analytic Charge Model for Surrounding-Gate MOSFETs

Author

Yu, Bo ; Lu, Wei-Yuan ; Lu, Huaxin ; Taur, Yuan

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA

Volume

54

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

492

Lastpage

496

Abstract

This paper presents an analytic charge model for surrounding-gate MOSFETs. Without the charge sheet approximation, the model is based on closed-form solution of Poisson´s equation, current continuity equation, and Ward-Dutton linear charge partition. It continuously covers all the operation regions, i.e., linear, saturation, and subthreshold, with unique analytic expressions. The physics-based nature makes this model free of fitting parameters and hence predictive. In addition, it is inherently not source-referenced to avoid asymmetries. It is shown that the current-voltage characteristics generated by this model agree with the numerical simulation results

Keywords

MOSFET; Poisson equation; numerical analysis; semiconductor device models; Poisson´s equation; Ward-Dutton linear charge partition; analytic charge model; compact model; current continuity equation; numerical simulation; surrounding-gate MOSFET; Capacitance; Circuit simulation; Closed-form solution; Electron mobility; Electrostatics; MOSFETs; Numerical simulation; Poisson equations; Semiconductor device modeling; Silicon; Compact model; MOSFETs; surrounding gate (SG);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.890264

Filename

4114866