Design and analysis of GaN HEMT based LNA with CPW matching

Author

Sarathkrishna, S. ; Balamurugan, Karthigha ; Devi, M. Nirmala ; Jayakumar, M.

Author_Institution

Dept. of Electron. & Commun. Eng, Amrita Vishwa Vidyapeetham, Coimbatore, India

fYear

2014

fDate

11-13 Sept. 2014

Firstpage

1

Lastpage

4

Abstract

GaN based devices are in great demand due to its rugged characteristics at extreme conditions. In this paper, design of GaN monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) with coplanar waveguide matching is presented to understand the key aspects of high gain, low noise figure and high linearity. The LNA can be used in base station technologies as frequency of interest is from 0.6-3 GHz. It delivers gain of 23 dB and noise figure 0.3 dB and OIP3 upto 51 dBm. The linear performance presented here enables reconfigurable designs of LNA over multiple octaves of bandwidth.

Keywords

MMIC; coplanar waveguides; gallium compounds; high electron mobility transistors; low noise amplifiers; CPW matching; GaN; HEMT based LNA; MMIC; OIP3; base station technologies; coplanar waveguide matching; frequency 0.6 GHz to 3 GHz; gain 23 dB; linearity; low noise amplifier; low noise figure; monolithic microwave integrated circuit; reconfigurable designs; Coplanar waveguides; Gain; Gallium nitride; HEMTs; Low-noise amplifiers; Noise figure; GaN HEMT; coplanar waveguide; low noise amplifier (LNA);

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Optical Communications Networks (WOCN), 2014 Eleventh International Conference on

Conference_Location

Vijayawada

Print_ISBN

978-1-4799-3155-2

Type

conf

DOI

10.1109/WOCN.2014.6923066

Filename

6923066