30-nm scale fabrication of magnetic tunnel junctions using EB assisted CVD hard masks

Author

Isogami, Shinji ; Tsunoda, Masakiyo ; Takahashi, Migaku

Author_Institution

Dept. of Electr. Eng., Tohoku Univ., Sendai, Japan

Volume

41

Issue

10

fYear

2005

Firstpage

3607

Lastpage

3609

Abstract

30-nm scale fabrication of magnetic tunnel junctions (MTJs) was demonstrated. A scanning electron microscope (SEM) was used for chemical-vapor deposition (CVD) of carbon hard masks. Using electron beam (EB)-CVD, less than several 10-nm scale carbon pillar could be formed on MTJ films. Argon ion milling, of which incident angle from the normal of the film plane was determined 45° and 75°, was utilized to pattern the MTJs. TMR properties of 80-nm scale MTJs were successfully measured using DC-four-probe at room temperature.

Keywords

chemical vapour deposition; electron beam deposition; magnetic thin films; milling; nanotechnology; tunnelling magnetoresistance; 30 nm; 80 nm; MTJ films; argon ion milling; carbon hard masks; chemical-vapor deposition; electron beam assisted CVD hard masks; electron beam-CVD; magnetic tunnel junctions; scanning electron microscope; Argon; Chemical elements; Chemical vapor deposition; Electron beams; Etching; Fabrication; Magnetic films; Magnetic tunneling; Milling; Scanning electron microscopy; Argon ion milling; chemical–vapor deposition (CVD); magnetic tunnel junctions (MTJs); scanning-electron microscope (SEM);

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2005.854786

Filename

1519385