A Quasi-Four-Pair Class-E CMOS RF Power Amplifier With an Integrated Passive Device Transformer

Author

Lee, Hongtak ; Park, Changkun ; Hong, Songcheol

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon

Volume

57

Issue

4

fYear

2009

fDate

4/1/2009 12:00:00 AM

Firstpage

752

Lastpage

759

Abstract

A quasi-four-pair structure of an RF CMOS power amplifier (PA) is proposed. The structure is applied to a 1.8-GHz class-E CMOS PA for a global system for mobile communications with a 0.18-mum RF CMOS process. This allows a simple design, as well as a high output power. The transistor size issues of the cascode PA are also studied. An integrated passive device transformer is used as both a power combiner and a matching circuit of the power stage. The results show an output power of 33.4-33.8 dBm and a power-added efficiency of 47.4%-50% with a supply voltage of 3.3 V at a frequency range of 1.71-1.91 GHz.

Keywords

CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; mobile communication; passive networks; power combiners; transformers; frequency 1.71 GHz to 1.91 GHz; frequency 1.8 GHz; integrated passive device transformer; matching circuit; mobile communications; power combiner; quasi-four-pair class-E CMOS RF power amplifier; size 0.18 mum; transistors; voltage 3.3 V; CMOS power amplifier (PA); Cascode; class-E; impedance transformation; integrated passive device (IPD); output power;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2009.2015122

Filename

4801537