Scalable Small-Signal and Noise Modeling for Deep-Submicrometer MOSFETs

A new scalable noise and small-signal model for deep-submicrometer metal-oxide semiconductor field-effect transistors, which consist of multiple elementary cells is presented in this paper. It allows exact modeling of all noise and small-signal model parameters from elementary cell to large-size device. The scalable rules for noise and small-signal model parameters are given in detail. The experimental and theoretical results show that at same bias condition, good scaling of the noise, and small-signal model parameters can be achieved between the large-size devices and elementary cell. Model verification is carried out by comparison of measured and simulated S-parameters and noise parameters. Good agreement is obtained between the measured and modeled results for 4 times 0.6 times 18 mum, 8 times 0.6 times 12 mum, and 32 times 0.6 times 2 mum gatewidth (number of gate fingers times unit gatewidth times cells) 90 nm gatelength MOSFETs.