• DocumentCode
    1193205
  • Title

    Damage Mechanics of Low Temperature Electromigration and Thermomigration

  • Author

    Li, Shidong ; Abdulhamid, Mohd F. ; Basaran, Cemal

  • Author_Institution
    Electron. Packaging Lab., State Univ. of New York at Buffalo, Buffalo, NY
  • Volume
    32
  • Issue
    2
  • fYear
    2009
  • fDate
    5/1/2009 12:00:00 AM
  • Firstpage
    478
  • Lastpage
    485
  • Abstract
    Electromigration (EM) and thermomigration (TM) are processes of mass transport which are critical reliability issue for next generation nanoelectronics. The purpose of this project is to study the influence of low temperature on EM and TM interaction. In this paper, a model for EM and TM process is proposed and has been implemented in finite element method. The governing equations include mass conservation, force equilibrium, heat transfer, and electricity conduction equations. A damage evolution model based on thermodynamics is introduced to evaluate the degradation in solder joints subjected to high current densities and high temperature gradients. The results are compared with experimental data to validate the model.
  • Keywords
    electromigration; electronics packaging; finite element analysis; heat transfer; power electronics; critical reliability issue; damage mechanics; electricity conduction equations; finite element method; force equilibrium; heat transfer; low temperature electromigration; mass conservation; power electronics packaging; solder joint reliability; thermomigration; Damage mechanics; electromigration; power electronics packaging; solder joint reliability; thermomigration;
  • fLanguage
    English
  • Journal_Title
    Advanced Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-3323
  • Type

    jour

  • DOI
    10.1109/TADVP.2008.2005840
  • Filename
    4801540