DocumentCode :
1193205
Title :
Damage Mechanics of Low Temperature Electromigration and Thermomigration
Author :
Li, Shidong ; Abdulhamid, Mohd F. ; Basaran, Cemal
Author_Institution :
Electron. Packaging Lab., State Univ. of New York at Buffalo, Buffalo, NY
Volume :
32
Issue :
2
fYear :
2009
fDate :
5/1/2009 12:00:00 AM
Firstpage :
478
Lastpage :
485
Abstract :
Electromigration (EM) and thermomigration (TM) are processes of mass transport which are critical reliability issue for next generation nanoelectronics. The purpose of this project is to study the influence of low temperature on EM and TM interaction. In this paper, a model for EM and TM process is proposed and has been implemented in finite element method. The governing equations include mass conservation, force equilibrium, heat transfer, and electricity conduction equations. A damage evolution model based on thermodynamics is introduced to evaluate the degradation in solder joints subjected to high current densities and high temperature gradients. The results are compared with experimental data to validate the model.
Keywords :
electromigration; electronics packaging; finite element analysis; heat transfer; power electronics; critical reliability issue; damage mechanics; electricity conduction equations; finite element method; force equilibrium; heat transfer; low temperature electromigration; mass conservation; power electronics packaging; solder joint reliability; thermomigration; Damage mechanics; electromigration; power electronics packaging; solder joint reliability; thermomigration;
fLanguage :
English
Journal_Title :
Advanced Packaging, IEEE Transactions on
Publisher :
ieee
ISSN :
1521-3323
Type :
jour
DOI :
10.1109/TADVP.2008.2005840
Filename :
4801540
Link To Document :
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