DocumentCode
1193205
Title
Damage Mechanics of Low Temperature Electromigration and Thermomigration
Author
Li, Shidong ; Abdulhamid, Mohd F. ; Basaran, Cemal
Author_Institution
Electron. Packaging Lab., State Univ. of New York at Buffalo, Buffalo, NY
Volume
32
Issue
2
fYear
2009
fDate
5/1/2009 12:00:00 AM
Firstpage
478
Lastpage
485
Abstract
Electromigration (EM) and thermomigration (TM) are processes of mass transport which are critical reliability issue for next generation nanoelectronics. The purpose of this project is to study the influence of low temperature on EM and TM interaction. In this paper, a model for EM and TM process is proposed and has been implemented in finite element method. The governing equations include mass conservation, force equilibrium, heat transfer, and electricity conduction equations. A damage evolution model based on thermodynamics is introduced to evaluate the degradation in solder joints subjected to high current densities and high temperature gradients. The results are compared with experimental data to validate the model.
Keywords
electromigration; electronics packaging; finite element analysis; heat transfer; power electronics; critical reliability issue; damage mechanics; electricity conduction equations; finite element method; force equilibrium; heat transfer; low temperature electromigration; mass conservation; power electronics packaging; solder joint reliability; thermomigration; Damage mechanics; electromigration; power electronics packaging; solder joint reliability; thermomigration;
fLanguage
English
Journal_Title
Advanced Packaging, IEEE Transactions on
Publisher
ieee
ISSN
1521-3323
Type
jour
DOI
10.1109/TADVP.2008.2005840
Filename
4801540
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