• DocumentCode
    1193246
  • Title

    Mound defect modeling in yield forecasts

  • Author

    De Gyvez, Jose Pineda

  • Author_Institution
    Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
  • Volume
    7
  • Issue
    4
  • fYear
    1994
  • fDate
    11/1/1994 12:00:00 AM
  • Firstpage
    430
  • Lastpage
    439
  • Abstract
    Although the majority of defects found in manufacturing lines have predominantly two-dimensional effects, there are many situations in which 2-D defect models do not suffice, e.g., tall layer bulks, residual resist flakes, and extraneous materials embedded in the IC. In this paper a more general model based on mound defects is presented. Both catastrophic and soft effects of mound defects are investigated. The defect model is based on the geometrical properties that result from the interaction between IC and defect size in two coordinate spaces: x-y and z. The approach to model catastrophic effects is a natural extension to the concept of critical areas, namely, the extraction of critical volumes. The simplicity of the extraction method makes it suitable for inclusion in common layout editing tools. Through the course of this work hints to the origins of mound defects will be given, conditions to capture critical volumes will be developed, realistic layout results will be shown, and a yield model taking into account these new kind of defects will be presented
  • Keywords
    integrated circuit layout; integrated circuit modelling; integrated circuit yield; semiconductor process modelling; IC; catastrophic effects; critical volumes; embedded extraneous materials; geometrical properties; layout editing tools; manufacturing lines; mound defect modeling; residual resist flakes; soft effects; tall layer bulks; yield forecasts; Circuit faults; Contamination; Integrated circuit modeling; Lithography; Nonhomogeneous media; Predictive models; Resists; Semiconductor device modeling; Solid modeling; Two dimensional displays;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.330280
  • Filename
    330280