DocumentCode :
1193246
Title :
Mound defect modeling in yield forecasts
Author :
De Gyvez, Jose Pineda
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Volume :
7
Issue :
4
fYear :
1994
fDate :
11/1/1994 12:00:00 AM
Firstpage :
430
Lastpage :
439
Abstract :
Although the majority of defects found in manufacturing lines have predominantly two-dimensional effects, there are many situations in which 2-D defect models do not suffice, e.g., tall layer bulks, residual resist flakes, and extraneous materials embedded in the IC. In this paper a more general model based on mound defects is presented. Both catastrophic and soft effects of mound defects are investigated. The defect model is based on the geometrical properties that result from the interaction between IC and defect size in two coordinate spaces: x-y and z. The approach to model catastrophic effects is a natural extension to the concept of critical areas, namely, the extraction of critical volumes. The simplicity of the extraction method makes it suitable for inclusion in common layout editing tools. Through the course of this work hints to the origins of mound defects will be given, conditions to capture critical volumes will be developed, realistic layout results will be shown, and a yield model taking into account these new kind of defects will be presented
Keywords :
integrated circuit layout; integrated circuit modelling; integrated circuit yield; semiconductor process modelling; IC; catastrophic effects; critical volumes; embedded extraneous materials; geometrical properties; layout editing tools; manufacturing lines; mound defect modeling; residual resist flakes; soft effects; tall layer bulks; yield forecasts; Circuit faults; Contamination; Integrated circuit modeling; Lithography; Nonhomogeneous media; Predictive models; Resists; Semiconductor device modeling; Solid modeling; Two dimensional displays;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.330280
Filename :
330280
Link To Document :
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