Static charge removal with IPA solution

Author

Ohmi, Tadahiro ; Sudoh, Seiji ; Mishima, Hiroyuki

Author_Institution

Dept. of Electron., Tohoku Univ., Sendai, Japan

Volume

7

Issue

4

fYear

1994

fDate

11/1/1994 12:00:00 AM

Firstpage

440

Lastpage

446

Abstract

Due to the an increase in pattern densities and wafer diameters, it is extremely difficult for wet chemical processing to perform complete cleaning, rinsing and drying for highly rugged surface of very fine pattern ULSI devices. IPA Vapor Drying is a widely used drying method in semiconductor manufacturing. As IPA has low surface tension and very high solubility to water, it is suitable for IPA vapor process to perfectly eliminate contamination of the wafer surface. This drying system also has an ability to eliminate static charge and can essentially achieve the high quality of the surface cleanliness. Therefore, the mechanism of static charge removal was studied using a quantitative method for the direct measurement of static charge

Keywords

ULSI; drying; integrated circuit technology; organic compounds; surface charging; surface cleaning; surface contamination; IPA Vapor Drying; IPA solution; cleaning; contamination; drying system; fine pattern ULSI devices; iospropyl alcohol; quantitative measurement; rugged wafer surface; semiconductor manufacturing; solubility; static charge removal; surface tension; Charge measurement; Chemical processes; Cleaning; Current measurement; Pollution measurement; Semiconductor device manufacture; Surface contamination; Surface tension; Ultra large scale integration; Water pollution;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.330281

Filename

330281