DocumentCode :
1193253
Title :
Static charge removal with IPA solution
Author :
Ohmi, Tadahiro ; Sudoh, Seiji ; Mishima, Hiroyuki
Author_Institution :
Dept. of Electron., Tohoku Univ., Sendai, Japan
Volume :
7
Issue :
4
fYear :
1994
fDate :
11/1/1994 12:00:00 AM
Firstpage :
440
Lastpage :
446
Abstract :
Due to the an increase in pattern densities and wafer diameters, it is extremely difficult for wet chemical processing to perform complete cleaning, rinsing and drying for highly rugged surface of very fine pattern ULSI devices. IPA Vapor Drying is a widely used drying method in semiconductor manufacturing. As IPA has low surface tension and very high solubility to water, it is suitable for IPA vapor process to perfectly eliminate contamination of the wafer surface. This drying system also has an ability to eliminate static charge and can essentially achieve the high quality of the surface cleanliness. Therefore, the mechanism of static charge removal was studied using a quantitative method for the direct measurement of static charge
Keywords :
ULSI; drying; integrated circuit technology; organic compounds; surface charging; surface cleaning; surface contamination; IPA Vapor Drying; IPA solution; cleaning; contamination; drying system; fine pattern ULSI devices; iospropyl alcohol; quantitative measurement; rugged wafer surface; semiconductor manufacturing; solubility; static charge removal; surface tension; Charge measurement; Chemical processes; Cleaning; Current measurement; Pollution measurement; Semiconductor device manufacture; Surface contamination; Surface tension; Ultra large scale integration; Water pollution;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.330281
Filename :
330281
Link To Document :
بازگشت