Applied RTP optical modeling: an argument for model-based control

Author

Sorrell, F.Yates ; Yu, Seungil ; Kiether, William J.

Author_Institution

Dept. of Mech. & Aerosp. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

7

Issue

4

fYear

1994

fDate

11/1/1994 12:00:00 AM

Firstpage

454

Lastpage

459

Abstract

A simulation of a complete rapid thermal processing (RTP) system is made to investigate the accuracy of various techniques for temperature control. The process simulated was the chemical vapor deposition (CVD) of polycrystalline silicon over an oxide. Control strategies considered were, open loop control, pyrometer control, pyrometer control with a correction for emissivity changes produced by CVD, and open loop control with the lamp heating programmed as a function of time, based an model predictions. The temperature variation and final film thickness of each was predicted by the simulation. The results indicate that model-based open loop control is viable strategy for practical RTCVD control. Based on this strategy, model-based open loop control was then implemented for the control of an existing RTP system. The experimental results confirm the simulations and provide improved temperature control for RTCVD

Keywords

chemical vapour deposition; pyrometers; rapid thermal processing; semiconductor process modelling; temperature control; RTCVD; RTP optical modeling; Si-SiO₂; chemical vapor deposition; emissivity; lamp heating; model-based control; open loop control; polycrystalline silicon film; pyrometer control; rapid thermal processing; simulation; temperature control; Chemical vapor deposition; Heating; Lamps; Open loop systems; Optical control; Optical films; Predictive models; Rapid thermal processing; Silicon; Temperature control;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.330285

Filename

330285