Title :
Athermalization of a silica-based waveguide with a UV-induced Bragg grating on a crystallized glass substrate
Author :
Kintaka, Kenji ; Nishii, Junji ; Nishiyama, Hiroaki ; Kawamoto, Yasushi ; Sakamoto, Akihiko
Author_Institution :
Photonics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Ikeda, Japan
fDate :
3/1/2003 12:00:00 AM
Abstract :
To realize athermal glass films, formation of Ge-B-SiO2 and F-B-SiO2 films by plasma-enhanced chemical vapor deposition (PECVD) was examined on several substrates with various thermal expansion coefficients. Waveguide Bragg gratings were fabricated by irradiation with a KrF excimer laser light through a phase mask. A temperature dependence of the Bragg wavelength as low as 4 pm/°C was obtained in a 6GeO2-13B2O3-81SiO2 (mol%) core and 13B2O3-87SiO2 (mol%) cladding waveguide or in a 13B2O3-87SiO2 (mol%) core, 6GeO2-13B2O3-81SiO2 (mol%) grating layer and 6F2-10B2O3-84SiO2 (mol%) cladding waveguide on crystallized glass substrates with a thermal expansion coefficient of -2.0 × 10-6/°C. Such temperature sensitivity is one third of conventional waveguide Bragg grating devices.
Keywords :
Bragg gratings; claddings; laser materials processing; optical communication equipment; optical fabrication; optical films; optical glass; optical waveguides; plasma CVD; sensitivity; silicon compounds; thermal expansion; 13B2O3-87SiO2; 6F2-10B2 O3-84SiO2; 6GeO2-13B2O3-81SiO2; F-B-SiO2; F-B-SiO2 films; F2-B2O3-SiO2; Ge-B-SiO2; Ge-B-SiO2 films; GeO2-B2O3-SiO2; KrF; UV-induced Bragg grating; athermal glass films; athermalization; cladding waveguide; crystallized glass substrate; grating layer; phase mask; plasma-enhanced chemical vapor deposition; silica-based waveguide; substrates; temperature dependence; temperature sensitivity; thermal expansion coefficient; thermal expansion coefficients; waveguide Bragg grating fabrication; Bragg gratings; Chemical lasers; Chemical vapor deposition; Crystallization; Glass; Plasma chemistry; Plasma temperature; Plasma waves; Thermal expansion; Waveguide lasers;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2003.809553