Title :
DC to 8 GHz 11 dB gain Gilbert micromixer using GaInP/GaAs HBT technology
Author :
Meng, C.C. ; Lu, S.S. ; Chiang, M.H. ; Chen, H.-C.
Author_Institution :
Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
4/17/2003 12:00:00 AM
Abstract :
A wideband GaInP/GaAs heterojunction bipolar transistor (HBT) micromixer from DC to 8 GHz with 11 dB single-ended conversion gain is demonstrated. The input return loss is better than 10 dB for frequencies up to 9 GHz. The single-to-differential input stage in a Gilbert micromixer renders good wideband frequency response and eliminates the need for common-mode rejection. IP1dB=-17 dBm and IIP3=-7 dBm are achieved for a small local oscillator power of -2 dBm when LO=5.35 GHz and RF=5.7 GHz.
Keywords :
III-V semiconductors; MMIC mixers; bipolar MMIC; frequency response; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 0 to 8 GHz; 11 dB; GaInP-GaAs; GaInP/GaAs; Gilbert micromixer; HBT technology; RF high-frequency mixer; input return loss; single-ended conversion gain; single-to-differential input stage; wideband frequency response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030458
