Title :
High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation
Author :
Dosunmu, O.I. ; Cannon, D.D. ; Emsley, M.K. ; Kimerling, L.C. ; Unlu, M.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA
Abstract :
We have designed and fabricated high-speed resonant cavity enhanced germanium (Ge) Schottky photodetectors on a silicon-on-insulator substrate. These back-illuminated detectors have demonstrated 3-dB bandwidths of more than 12 GHz at 3-V reverse bias and a peak quantum efficiency of 59% (R=0.73 A/W) at the resonant wavelength of /spl sim/1540 nm. Time domain measurements of our Ge photodetectors with diameters of up to 48 μm show transit-time limited impulse responses corresponding to bandwidths of at least 6.7 GHz, making these detectors compatible with 10-Gb/s data communication systems.
Keywords :
elemental semiconductors; germanium; optical resonators; photodetectors; silicon-on-insulator; 10 Gbit/s; 1550 nm; 3 V; 59 percent; Ge; Ge Schottky photodetectors; Si; back-illuminated detectors; quantum efficiency; resonant cavity; silicon-on-insulator substrate; transit-time impulse response; Bandwidth; Detectors; Germanium; Monolithic integrated circuits; Photodetectors; Photonic band gap; Resonance; Semiconductor films; Silicon on insulator technology; Substrates; Germanium (Ge); photodetectors; resonant cavity enhanced (RCE); silicon-on-insulator (SOI);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.836917