Title :
MOVPE-grown GaInNAs VCSELs at 1.3 μm with conventional mirror design approach
Author :
Vukusic, J. ; Modh, P. ; Larsson, A. ; Hammar, M. ; Mogg, S. ; Christiansson, U. ; Oscarsson, V. ; Ödling, E. ; Malmquist, J. ; Ghisoni, M. ; Gong, P. ; Griffiths, E. ; Joel, A.
Author_Institution :
Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
4/17/2003 12:00:00 AM
Abstract :
1.3 μm oxide confined GaInNAs VCSELs designed using the same design philosophy used for standard 850 nm VCSELs is presented. The VCSELs have doped mirrors, with graded and highly doped interfaces, and are fabricated using production-friendly procedures. Multimode VCSELs (11 μm oxide aperture) with an emission wavelength of 1287 nm have a threshold current of 3 mA and produce 1 mW of output power at 20°C. The maximum operating temperature is 95°C. Emission at 1303 nm with 1 mW of output power and a threshold current of 7 mA has been observed from VCSELs with a larger detuning between the gain peak and the cavity resonance.
Keywords :
III-V semiconductors; MOCVD; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical communication equipment; optical fabrication; quantum well lasers; surface emitting lasers; vapour phase epitaxial growth; 1 mW; 1.3 micron; 11 micron; 1287 nm; 1303 nm; 20 to 95 C; 3 mA; 7 mA; GaInNAs; GaInNAs QWs; GaInNAs quantum wells; MOVPE-grown GaInNAs; conventional mirror design approach; distributed Bragg reflector; doped mirrors; multimode VCSELs; n-type DBR; oxide confined GaInNAs VCSELs; p-type DBR; surface emitting laser; vertical cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030450
