DocumentCode
1193820
Title
Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 μm VCSELs
Author
Shin, Jae-Heon ; Kim, Jong-Hee ; Song, Hyun-Woo ; Han, Il-Young ; Ju, Young-Gu ; Han, Won-Seok ; Kwon, O-Kyun
Author_Institution
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Volume
39
Issue
8
fYear
2003
fDate
4/17/2003 12:00:00 AM
Firstpage
664
Lastpage
665
Abstract
InAlGaAs/InP-based all-monolithic 1.3 μm VCSELs operating continuous wave up to 18°C are demonstrated. The whole structure is grown by a single step of MOCVD. Selective wet etching of an InP layer is used to form an air-gap aperture for the current confinement. The threshold current of an 8 μm device at 15°C is ∼2.8 mA.
Keywords
III-V semiconductors; MOCVD; aluminium compounds; etching; gallium arsenide; indium compounds; semiconductor growth; semiconductor lasers; surface emitting lasers; 0 to 18 degC; 1.3 micron; 2.8 mA; 8 micron; InAlGaAs-InP; InAlGaAs/InP; MOCVD; air-gap aperture; all-monolithic VCSELs; continuous-wave operation; current confinement; selective wet etching; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030456
Filename
1197989
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