DocumentCode
1193852
Title
Single-pole-double-throw switch based on toggle switch
Author
Schauwecker, B. ; Strohm, K.M. ; Mack, T. ; Simon, W. ; Luy, J.E.
Author_Institution
DaimlerChrysler Res. Center Ulm, Germany
Volume
39
Issue
8
fYear
2003
fDate
4/17/2003 12:00:00 AM
Firstpage
668
Lastpage
670
Abstract
A single-pole-double-throw (SPDT) switch based on the toggle switch, a new type of radio frequency (RF) microelectromechanical (MEMS) switch structure for low voltage actuation, high broadband application and enhanced power capability, is presented. Electromagnetic simulation results are discussed and the fabrication process and measurement results are given. The SPDT switch exhibits low insertion loss (<0.5 dB at 20 GHz) and high isolation (>28 dB at 30 GHz).
Keywords
metallisation; microswitches; microwave switches; photolithography; silicon; 0.5 dB; 20 to 30 GHz; EM simulation; LV actuation; RF MEMS switch structure; SPDT switch; Si; broadband application; cantilever metallisation; fabrication process; high isolation; high-resistivity Si wafers; low insertion loss; low voltage actuation; microelectromechanical switch structure; radio frequency switch structure; single-pole-double-throw switch; toggle switch;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030452
Filename
1197992
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