Title :
Single-pole-double-throw switch based on toggle switch
Author :
Schauwecker, B. ; Strohm, K.M. ; Mack, T. ; Simon, W. ; Luy, J.E.
Author_Institution :
DaimlerChrysler Res. Center Ulm, Germany
fDate :
4/17/2003 12:00:00 AM
Abstract :
A single-pole-double-throw (SPDT) switch based on the toggle switch, a new type of radio frequency (RF) microelectromechanical (MEMS) switch structure for low voltage actuation, high broadband application and enhanced power capability, is presented. Electromagnetic simulation results are discussed and the fabrication process and measurement results are given. The SPDT switch exhibits low insertion loss (<0.5 dB at 20 GHz) and high isolation (>28 dB at 30 GHz).
Keywords :
metallisation; microswitches; microwave switches; photolithography; silicon; 0.5 dB; 20 to 30 GHz; EM simulation; LV actuation; RF MEMS switch structure; SPDT switch; Si; broadband application; cantilever metallisation; fabrication process; high isolation; high-resistivity Si wafers; low insertion loss; low voltage actuation; microelectromechanical switch structure; radio frequency switch structure; single-pole-double-throw switch; toggle switch;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030452
