Title :
Low Dark Count Rate and High Single-Photon Detection Efficiency Avalanche Photodiode in Geiger-Mode Operation
Author :
Liu, Mingguo ; Bai, Xiaogang ; Hu, Chong ; Guo, Xiangyi ; Campbell, Joe C. ; Pan, Zhong ; Tashima, Mark M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA
fDate :
3/15/2007 12:00:00 AM
Abstract :
An In0.53Ga0.47As-InP avalanche photodiode with very low dark current (0.15 pA at 95% breakdown voltage, 200 K) has been characterized in gated mode for single-photon detection. The temperature dependence of dark current and dark count yields activation energy of ~0.4 eV from 240 K to 297 K. High single-photon detection efficiency (SPDE) at telecom wavelengths with very low dark count rate (DCR) (e.g., DCR =12 kHz at SPDE =45% at 1.31 mum and 200 K) was achieved
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; photodetectors; 0.15 pA; 0.4 eV; 1.31 mum; 12 kHz; 200 K; 240 to 297 K; Geiger-mode operation; In0.53Ga0.47As-InP; In0.53Ga0.47As-InP photodiode; avalanche photodiode; dark count rate; dark current; gated mode; single-photon detection; temperature dependence; Avalanche photodiodes; Breakdown voltage; Capacitors; Counting circuits; Dark current; Delay; Diode lasers; Optical pulses; Photoconductivity; Photonic band gap; Avalanche photodiodes (APDs); dark count rate (DCR); single-photon avalanche photodiodes; single-photon detection efficiency (SPDE);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.891939
