Title :
Electrical properties of 1.55 μm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime
Author :
Mangeney, J. ; Joulaud, L. ; Decobert, Jean ; Lourtioz, J.-M. ; Cabaret, S. ; Crozat, P.
Author_Institution :
Inst. d´Electronique Fondamentale, Univ. Paris-Sud, Orsay, France
fDate :
4/17/2003 12:00:00 AM
Abstract :
Carrier lifetimes as short as 270 fs with carrier mobility of 200 cm2/V/s and good performances in terms of layer resistivity have been obtained from ion-irradiated InGaAs. The residual carrier concentration measured in Hall effect experiments was found to be weakly modified in spite of the high defect concentration created by the ion bombardment. Ion-irradiated InGaAs appears to be specially adapted to fast photoconductive devices operating at optical communication wavelengths.
Keywords :
Hall effect; III-V semiconductors; carrier density; carrier lifetime; carrier mobility; electrical resistivity; gallium arsenide; indium compounds; ion beam effects; photoconducting materials; 1.55 micron; 270 fs; Hall effect; InGaAs; InGaAs layer; carrier mobility; defect concentration; electrical resistivity; ion irradiation; optical communication wavelength; residual carrier concentration; subpicosecond carrier lifetime; ultrafast photoconductive device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030441
