DocumentCode
1193987
Title
Energy transport gate current model accounting for non-Maxwellian energy distribution
Author
Gehring, A. ; Grasser, T. ; Kosina, H. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., Vienna, Austria
Volume
39
Issue
8
fYear
2003
fDate
4/17/2003 12:00:00 AM
Firstpage
691
Lastpage
692
Abstract
A new formulation to describe hot-electron tunnelling through dielectrics is presented. It is based on an expression for the electron energy distribution function which is characterised by its first three even moments. The model is simplified to make it applicable for energy-transport simulations, yielding a modified supply function in Tsu-Esaki´s equation. Simulations show excellent agreement with Monte Carlo results.
Keywords
MOSFET; hot carriers; semiconductor device models; tunnelling; MOSFET; Tsu-Esaki equation; electron energy distribution function; energy transport model; gate dielectric current; hot electron tunnelling; nonMaxwellian energy distribution; semiconductor device simulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030440
Filename
1198007
Link To Document