Title :
Energy transport gate current model accounting for non-Maxwellian energy distribution
Author :
Gehring, A. ; Grasser, T. ; Kosina, H. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Vienna, Austria
fDate :
4/17/2003 12:00:00 AM
Abstract :
A new formulation to describe hot-electron tunnelling through dielectrics is presented. It is based on an expression for the electron energy distribution function which is characterised by its first three even moments. The model is simplified to make it applicable for energy-transport simulations, yielding a modified supply function in Tsu-Esaki´s equation. Simulations show excellent agreement with Monte Carlo results.
Keywords :
MOSFET; hot carriers; semiconductor device models; tunnelling; MOSFET; Tsu-Esaki equation; electron energy distribution function; energy transport model; gate dielectric current; hot electron tunnelling; nonMaxwellian energy distribution; semiconductor device simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030440
