Process integration of single-wafer technology in a 300-mm fab, realizing drastic cycle time reduction with high yield and excellent reliability

Author

Ikeda, Shuji ; Nemoto, Kazunori ; Funabashi, Michimasa ; Uchino, Toshiyuki ; Yamamoto, Hirohiko ; Yabuoshi, Noriyuki ; Sasaki, Yasushi ; Komori, Kazuhiro ; Suzuki, Norio ; Nishihara, Shinji ; Sasabe, Shunji ; Koike, Atsuyoshi

Author_Institution

Trecenti-Technol. Inc., Ibaraki, Japan

Volume

16

Issue

2

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

102

Lastpage

110

Abstract

In this paper, we discuss a new technology implemented with single-wafer processing for a 300-mm fab. Newly developed equipment and chemicals reduce the process time and provide cost savings. The combination of fully automated systems and single-wafer processing significantly reduces queuing time. The process has been re-integrated to eliminate long time processes and make it suitable for single-wafer technologies. As a result, a very aggressive cycle time (0.25 days/layer) with high yield, in double-polysilicon, sextuple-metal, 0.18-μm logic process has been demonstrated. High-performance devices with excellent reliability are also obtained. A new methodology for detecting parametric errors effectively in the early stages of production is implemented for quick yield ramp up.

Keywords

VLSI; failure analysis; integrated circuit manufacture; integrated circuit reliability; integrated circuit technology; integrated circuit yield; 0.18 micron; 300 mm; cost savings; cycle time reduction; deep submicron process; double-polysilicon process; failure analysis; fully automated systems; manufacturing automation; parametric errors detection methodology; process integration; queuing time; reliability; sextuple-metal logic process; single-wafer process; yield optimization; Chemical processes; Chemical technology; Cleaning; Costs; Electronic design automation and methodology; Failure analysis; Logic devices; Manufacturing processes; Production; Temperature;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2003.810935

Filename

1198016