Contrasting single-wafer and batch processing for memory devices

Author

Weimer, Ronald A. ; Eppich, Denise Marra ; Beaman, Kevin L. ; Powell, D. Carl ; González, Fernando

Author_Institution

Micron Technol. Inc., Boise, ID, USA

Volume

16

Issue

2

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

138

Lastpage

146

Abstract

Single-wafer technology has been shown to improve memory device performance and ultimately improve product yield for several front-end-of-line (FEOL) processes. Single-wafer processes that are reviewed include silicon nitride for word-line cap, flash oxide-nitride-oxide dielectric, cell dielectric re-oxidation, and selective oxidation.

Keywords

batch processing (industrial); integrated circuit manufacture; integrated memory circuits; nitridation; oxidation; plasma CVD; rapid thermal processing; FEOL processes; RTA; RTP; batch processing; cell dielectric; flash oxide-nitride-oxide dielectric; front-end-of-line processes; memory device manufacturing; plasma CVD; product yield; rapid thermal annealing; rapid thermal processing; re-oxidation; selective oxidation; semiconductor manufacturing; single-wafer processing; word-line cap; Chemical technology; Costs; Dielectrics; Plasma chemistry; Plasma devices; Plasma materials processing; Random access memory; Rapid thermal annealing; Rapid thermal processing; Silicon;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2003.810939

Filename

1198020