Title :
Electrical characterization of platinum deposited by focused ion beam
Author :
Smith, Stewart ; Walton, Anthony J. ; Bond, Sue ; Ross, Alan W S ; Stevenson, J. Tom M ; Gundlach, Alan M.
Author_Institution :
Scottish Microelectron. Centre, Univ. of Edinburgh, UK
fDate :
5/1/2003 12:00:00 AM
Abstract :
Focused ion beam (FIB) systems are commonly used to image, repair and modify integrated circuits by cutting holes in passivation to create vias or to selectively break metal tracks. The ion beam can also be used to deposit a metal, such as platinum, to create new connections. These techniques are very useful tools for debugging designs and testing possible changes to the circuit without the expense of new mask sets or silicon. This paper presents test structures which can be used to characterize a FIB induced platinum deposition process. Sheet resistance test structures have been fabricated using a FIB tool and the results of testing these structures are presented. The sheet resistance data has been used to fabricate platinum straps with a known resistance. This extends the capability of the focused ion beam system beyond the deposition of simple conducting straps. The design of the test structures has been improved through the use of current flow simulation to investigate the effects of geometry and misalignment on the measurement accuracy. The results of these simulations are also presented.
Keywords :
MOCVD; electric resistance measurement; focused ion beam technology; integrated circuit interconnections; integrated circuit measurement; integrated circuit testing; platinum; thin film resistors; FIB deposition; IC connections; Kelvin bridge resistor test structure; Pt; bridge resistance measurement; current flow simulation; design debugging; electrical characterization; focused ion beam; geometry effects; integrated circuit repair; integrated circuits; measurement accuracy; misalignment effects; organometallic precursor gas; platinum straps; sheet resistance test structures; van der Pauw method; Circuit testing; Current measurement; Debugging; Focusing; Geometry; Ion beams; Passivation; Platinum; Silicon; Solid modeling;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2003.811580