Title :
Metallization proximity studies for copper spiral inductors on silicon
Author :
Sia, Choon Beng ; Yeo, Kiat Seng ; Do, Manh Anh ; Ma, Jian-Guo
Author_Institution :
Adv. RFIC (S) Pic. Ltd., Singapore, Singapore
fDate :
5/1/2003 12:00:00 AM
Abstract :
The impacts of metallization proximity for copper spiral inductors on silicon have been investigated in this paper. Performance of the spiral inductor versus area consumption tradeoff with respect to its core diameter is evaluated quantitatively for the first time. Effects of the inductor´s proximate grounded metallization on its overall inductive performance are also analyzed.
Keywords :
Q-factor; copper; eddy currents; inductance; inductors; integrated circuit metallisation; integrated circuit testing; radiofrequency integrated circuits; Cu spiral inductors; Cu-Si; RF integrated circuits; Si; area consumption tradeoff; core diameter; eddy-current resistance; inductance; inductive performance; inductor performance; metallization proximity; proximate grounded metallization; quality factor; series resistance; Conductors; Copper; Inductance; Inductors; Metallization; Q factor; Radio frequency; Silicon; Spirals; Testing;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2003.811574
