Extraction of the base and emitter resistances in bipolar transistors using an accurate base resistance model

Author

Ingvarson, Fredrik ; Linder, Martin ; Jeppson, Kjell O.

Author_Institution

Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

16

Issue

2

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

228

Lastpage

232

Abstract

A straightforward method for extracting the base and emitter resistances is presented. The method has the following properties: 1) only a standard forward Gummel measurement on one transistor is required; 2) current-crowding and conductivity-modulation in the base are accounted for through the use of an accurate base resistance model; and 3) the resistance parameters are extracted using a nonlinear optimization step. Furthermore, a technique for extraction of the high-injection parameters of a modified collector current model is also presented.

Keywords

bipolar transistors; electric resistance measurement; parameter estimation; semiconductor device measurement; semiconductor device models; base resistance extraction; base resistance model; bipolar transistors; conductivity modulation; current crowding; emitter resistance extraction; forward Gummel measurement; high-injection parameters; modified collector current model; nonlinear optimization step; parameter extraction; Bipolar transistors; Conductivity measurement; Current measurement; Data mining; Electrical resistance measurement; Measurement standards; Optimization methods; Parameter extraction; Testing; Voltage;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2003.811573

Filename

1198033