Title :
A test structure for spectrum analysis of hot-carrier-induced photoemission from MOSFETs
Author :
Matsuda, Toshihiro ; Ohzone, Takashi ; Odanaka, Shinji ; Yamashita, Kyoji ; Koike, Norio ; Tatsuuma, Ken-ichiro
Author_Institution :
Dept. of Electron. & Informatics, Toyama Prefectural Univ., Japan
fDate :
5/1/2003 12:00:00 AM
Abstract :
Hot-carrier-induced photoemission of subquarter-micron n-MOSFETs is analyzed using a specially designed test structure, which has a wide channel width of 2.0 mm for sufficient photoemission intensity. Since the test structure consists of parallel-connected unit MOSFETs and photoemission images are uniform, it can be estimated that the measured spectra are the same as those from unit MOSFETs. The relation between photon counts and photon energy suggests that photon energy has a Boltzmann distribution, exp(-hν/kTe). The electron temperature Te calculated from the photon emission spectrum takes a minimum value at the channel length of 0.23 μm. If Te is related to device reliability, it suggests the possibility that the device structure optimized for a certain channel length may not be optimum for other channel length devices.
Keywords :
MOSFET; hot carriers; photoelectron spectroscopy; semiconductor device reliability; semiconductor device testing; spectral analysis; 0.23 micron; 2.0 mm; Boltzmann distribution; MOSFETs; channel length; channel width; device reliability; electron temperature; hot-carrier-induced photoemission; parallel-connected unit MOSFETs; photoemission images; photoemission intensity; photon counts; photon energy; spectrum analysis; subquarter-micron n-MOSFETs; test structure; Charge coupled devices; Hot carriers; MOSFET circuits; Optical filters; Optical microscopy; Optical variables control; Photoelectricity; Radiative recombination; Spontaneous emission; Testing;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2003.811585
