DocumentCode
1194278
Title
Analytical model of high-frequency noise spectrum in Schottky-barrier diodes
Author
Shiktorov, P. ; Starikov, E. ; Gruzinskis, V. ; Reggiani, L. ; Varani, L. ; Vaissiere, J.C.
Author_Institution
Semicond. Phys. Inst., Vilnius, Lithuania
Volume
26
Issue
1
fYear
2005
Firstpage
2
Lastpage
4
Abstract
We propose an analytical model for the high-frequency noise of Schottky-barrier diodes (SBD). The high-frequency spectrum is shown to be governed by collective motions of carriers in the neutral region of the SBD caused by the self-consistent electric field. The model is validated by comparison with Monte Carlo simulations of GaAs SBDs operating from barrier-limited to flatband conditions.
Keywords
Schottky diodes; gallium arsenide; radiofrequency spectra; semiconductor device noise; submillimetre waves; GaAs; GaAs SBDs; Monte Carlo simulations; Schottky-barrier diodes; high-frequency noise spectrum; self-consistent electric field; terahertz radiation; Acoustical engineering; Analytical models; Fluctuations; Gallium arsenide; Low-frequency noise; Physics; Resonance; Schottky diodes; Semiconductor device noise; Voltage; High-frequency noise; Schottky-barrier diodes; terahertz (THz) radiation;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2004.840396
Filename
1372677
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