Title :
An abrupt InP-GaInAs-InP DHBT
Author :
Elias, D.C. ; Kraus, S. ; Gavrilov, A. ; Cohen, S. ; Buadana, N. ; Sidorov, Vasily ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Abstract :
We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with a thin heavily doped n-type InP layer at the base-collector interface. The energy barrier between the base and the collector was fully eliminated by a 4-nm-thick silicon doped layer with N/sub D/=3×10/sup 19/ cm/sup -3/. The obtained fT and fmax values at a current density of 1 mA/μm2 are comparable to the values reported for DHBTs with a grade layer between the base and the collector.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; silicon; 4 nm; InP-GaInAs-InP; abrupt double heterojunction bipolar transistors; base-collector interface; doping; energy barrier; silicon doped layer; thin heavily doped n-type InP layer; Current density; Doping; Double heterojunction bipolar transistors; Energy barrier; Fabrication; Heat sinks; Indium phosphide; Radio frequency; Silicon; Wet etching; Doping; InP; double heterojunction bipolar transistors (DHBTs); energy barrier;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.840707
