An abrupt InP-GaInAs-InP DHBT

Author

Elias, D.C. ; Kraus, S. ; Gavrilov, A. ; Cohen, S. ; Buadana, N. ; Sidorov, Vasily ; Ritter, D.

Author_Institution

Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel

Volume

26

Issue

1

fYear

2005

Firstpage

14

Lastpage

16

Abstract

We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with a thin heavily doped n-type InP layer at the base-collector interface. The energy barrier between the base and the collector was fully eliminated by a 4-nm-thick silicon doped layer with N/sub D/=3×10/sup 19/ cm/sup -3/. The obtained f_T and f_max values at a current density of 1 mA/μm² are comparable to the values reported for DHBTs with a grade layer between the base and the collector.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; silicon; 4 nm; InP-GaInAs-InP; abrupt double heterojunction bipolar transistors; base-collector interface; doping; energy barrier; silicon doped layer; thin heavily doped n-type InP layer; Current density; Doping; Double heterojunction bipolar transistors; Energy barrier; Fabrication; Heat sinks; Indium phosphide; Radio frequency; Silicon; Wet etching; Doping; InP; double heterojunction bipolar transistors (DHBTs); energy barrier;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.840707

Filename

1372681