Title :
Water-related degradation of contacts in the multilevel MOS IC with spin-on glasses as interlevel dielectrics
Author :
Lifshitz, N. ; Lai, W.Y.C. ; Smolinsky, G.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
The effect of using silicon-dioxide-based spin-on glasses as interlevel dielectrics in multilevel silicon integrated circuits is discussed. It was found that water in the spin-on glass leads to an open-circuit failure of contacts in small windows due to the outgassing of water during aluminum deposition. Although a 450 degrees C anneal can markedly improve the quality of the contacts, the process remains unreliable for manufacturing.<>
Keywords :
MOS integrated circuits; electrical contacts; glass; integrated circuit technology; metallisation; reliability; water; 450 C; 450 degrees C anneal; Al deposition; SiO/sub 2/ based spin on glass; interlevel dielectrics; multilevel MOS IC; multilevel metallisation; open-circuit failure of contacts; outgassing of water; small windows; spin-on glasses; unreliable process; Aluminum; Annealing; Circuits; Conducting materials; Degradation; Dielectric materials; Dielectric substrates; Glass; Silicon; Voltage;
Journal_Title :
Electron Device Letters, IEEE
