ZnSe based white light emitting diode on homoepitaxial ZnSe substrate

Author

Chang, S.J. ; Lin, T.K. ; Chiou, Y.Z. ; Huang, B.R. ; Chang, S.P. ; Chang, C.M. ; Lin, Y.C. ; Wong, C.C.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

1

Issue

1

fYear

2007

fDate

2/1/2007 12:00:00 AM

Firstpage

39

Lastpage

41

Abstract

ZnSe-based white light emitting diodes (LEDs) were homoepitaxially prepared on ZnSe substrates by molecular beam epitaxy. It was found to be possible to simultaneously observe the greenish-blue emission at 483 nm originating from the epitaxial layer and the weaker ZnSe substrate-related orange emission centred at around 595 nm. It was found that the emission wavelength of the LED and the measured chromaticity coordinate were almost independent of the injected current. It was also found that the turn-on voltage and the 20 mA operation voltage of the fabricated LED were 2.25 and 4 V, respectively

Keywords

II-VI semiconductors; light emitting diodes; molecular beam epitaxial growth; zinc compounds; 2.25 V; 20 mA; 4 V; 483 nm; 595 nm; ZnSe; ZnSe based white light emitting diode; chromaticity coordinate; epitaxial layer; homoepitaxial ZnSe substrate; homoepitaxially prepared; molecular beam epitaxy; operation voltage; substrate-related orange emission; turn-on voltage;

fLanguage

English

Journal_Title

Optoelectronics, IET

Publisher

iet

ISSN

1751-8768

Type

jour

DOI

10.1049/iet-opt:20060025

Filename

4117438