DocumentCode
1194456
Title
Nitride-based high power flip-chip near-UV leds with reflective submount
Author
Shen, C.F. ; Chang, S.J. ; Ko, T.K. ; Shei, S.C. ; Lai, W.C. ; Chang, C.S. ; Chen, W.S. ; Huang, S.P. ; Ku, Y.W. ; Horng, R.H.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Volume
1
Issue
1
fYear
2007
fDate
2/1/2007 12:00:00 AM
Firstpage
27
Lastpage
30
Abstract
Nitride-based high power flip-chip near-ultraviolet (UV) light emitting diodes (LEDs) with a reflective mirror are fabricated by depositing Al onto a Si submount. It is demonstrated that the Al layer coated onto a Si submount can effectively reflect downward emitting photons for flip-chip LEDs. Although the operation voltage of the proposed LEDs is slightly increased, it is found that the output power is at least 30% higher than that of conventional LEDs. It is also found that flip-chip near-UV LEDs are more reliable than conventional non-flip-chip LEDs
Keywords
flip-chip devices; light emitting diodes; mirrors; reflectivity; ultraviolet sources; Al; Si; downward emitting photons; flip-chip LEDs; flip-chip near-LTV LEDs; nitride-based high power flip-chip near-UV LEDs; nonflip-chip LEDs; operation voltage; output power; reflective mirror; reflective submount;
fLanguage
English
Journal_Title
Optoelectronics, IET
Publisher
iet
ISSN
1751-8768
Type
jour
DOI
10.1049/iet-opt:20060003
Filename
4117439
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