DocumentCode :
1194626
Title :
Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for R/sub ON/A-V/sub B/ tradeoff characteristics
Author :
Saito, W. ; Kuraguchi, M. ; Takada, Y. ; Tsuda, K. ; Omura, I. ; Ogura, T.
Author_Institution :
Semicond. Co., Toshiba Corp., Kawasaki, Japan
Volume :
52
Issue :
1
fYear :
2005
Firstpage :
106
Lastpage :
111
Abstract :
High breakdown voltage AlGaN-GaN power high-electron mobility transistors (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high breakdown voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the breakdown voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics between the on-resistance and the breakdown voltage can be improved by the optimization of the above design parameters, and the on-resistance can be estimated to be about 0.6 m/spl Omega//spl middot/cm/sup 2/ for the breakdown voltage of 600 V. This on-resistance is almost the same as that for the device on a conductive substrate.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; optimisation; power HEMT; power semiconductor switches; semiconductor device breakdown; wide band gap semiconductors; 600 V; AlGaN-GaN; conductive substrate; contact length; contact resistivity; doping concentration; field plate length; field plate structure; high breakdown voltage; high voltage device; insulating substrate; insulator thickness; power HEMT; power electronics application; power high-electron mobility transistors; power semiconductor device; specific on-resistance; Aluminum compounds; Gallium compounds; Optimization methods; Power MODFETs; Power semiconductor switches; GaN; high-voltage device; power semiconductor device;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2004.841338
Filename :
1372715
Link To Document :
بازگشت