DocumentCode
1194649
Title
A model to study the effect of selective anodic oxidation on ultrathin gate oxides
Author
Marathe, V.G. ; Paily, R. ; DasGupta, A. ; DasGupta, N.
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol., Chennai, India
Volume
52
Issue
1
fYear
2005
Firstpage
118
Lastpage
121
Abstract
We have studied the effect of selective anodic oxidation on ultrathin (22-31 /spl Aring/) silicon dioxide grown at different temperatures ranging from 600/spl deg/C to 875/spl deg/C, on both p- and n-type substrates. A model based on the concept of filling of pinholes by selective anodic oxidation is presented to quantitatively explain the reduction in the gate leakage current of the MOS capacitors after selective anodic oxidation.
Keywords
MOS capacitors; anodisation; leakage currents; semiconductor device models; silicon compounds; substrates; 22 to 31 /spl Aring/; 600 to 875 C; MOS capacitors; SiO/sub 2/; gate leakage current; n-type substrate; p-type substrate; pin holes; selective anodic oxidation; silicon dioxide; ultrathin gate oxides; Leakage currents; MOS capacitors; Semiconductor device modeling; Silicon compounds; Anodic oxidation; gate leakage current; gate oxide; metal-oxide-semiconductor (MOS) capacitors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2004.841284
Filename
1372717
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