Title :
Low-driving-current temperature-stable 10 Gbit/s operation of p-doped 1.3 μm quantum dot lasers between 20 and 90°C
Author :
Ishida, M. ; Hatori, N. ; Otsubo, K. ; Yamamoto, T. ; Nakata, Y. ; Ebe, H. ; Sugawara, M. ; Arakawa, Y.
Author_Institution :
Nanoelectron. Collaborative Res. Center, Univ. of Tokyo, Meguro
Abstract :
Low-driving-current temperature-stable 10 Gbit/s direct modulation was achieved for optimised 200 mum-long short cavity 1.3 mum p-doped quantum dot lasers. Driving conditions were 25.2 mAp-p for the modulation current and 23.4 mA for the bias current through the whole temperature range from 20 to 90degC
Keywords :
microcavity lasers; optical modulation; quantum dot lasers; 1.3 micron; 10 Gbit/s; 20 to 90 C; 200 micron; 23.4 mA; 25.2 mA; direct modulation; low-driving-current temperature-stable operation; p-doped quantum dot lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20073522
