Title :
Correct biasing rules for virtual DG mode operation in SOI-MOSFETs
Author :
Ohata, A. ; Pretet, J. ; Cristoloveanu, S. ; Zaslavsky, A.
Author_Institution :
IMEP ENSERG, Grenoble, France
Abstract :
The appropriate biasing rules for virtual double-gate (DG) operation of silicon-on-insulator (SOI)-MOSFETs are investigated. The cause for the optimistic subthreshold swing, achieved by the conventional biasing rule, is discussed and a correct methodology is proposed. Furthermore, we select the proper threshold voltages for the virtual DG operation based on the condition that both interfaces are simultaneously inverted.
Keywords :
MIS devices; MOSFET; field effect transistors; silicon-on-insulator; MOS devices; SOI-MOSFET; biasing rule; biasing rules; field effect transistors; silicon-on-insulator; subthreshold swing; threshold voltages; virtual double-gate operation; FETs; MIS devices; MOSFETs; Silicon on insulator technology; Field-effect transistors (FETs); MOS devices; silicon-on-insulator (SOI) technology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.841273
