Title :
Optimisation of a-factor for quantum dot InAs/GaAs fabry-perot lasers emitting at 1.3 μm
Author :
Cong, D.-Y. ; Martinez, A. ; Merghem, K. ; Moreau, G. ; Lemaitre, A. ; Provost, J.G. ; Gouezigou, O. Le ; Fischer, M. ; Krestnikov, I. ; Kovsh, A.R. ; Ramdane, A.
Author_Institution :
CNRS/Lab. de Photonique et de Nanostruct., Marcoussis
Abstract :
Dynamic measurements of the Henry factor alphaH of InAs/GaAs Fabry-Perot lasers are compared for 3-, 5- and 10-QD layers. While alphaH dramatically increases with the bias current for 3- and 5-QD stacks, it only amounts to <4 for the 10-layer stack at high currents, a value similar to that of QW-lasers
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; semiconductor quantum dots; 1.3 micron; Henry factor; InAs-GaAs; alpha-factor; quantum dot Fabry-Perot lasers; quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20073633
